Dr. Mansour Mortazavi, professor of Physics and Dr. Wei Du, research scientist of Lasers and Nanoscience Laboratories at the University of Arkansas at Pine Bluff (UAPB) received a $500,000 grant from the United States Army Research Lab to build measurement systems for advancement in mid-infrared laser and LED (light emitting diode) technology. The grant will enable the research team to develop a novel SiGeSn technique from fundamental material study to advanced optoelectronic devices demonstration. Such research allows the team implement the recently proposed research vision, “Silicon-based Longwave Integrated Optoelectronics (LIO),” which is beyond the current success of Si-Photonics in near infrared (NIR) wavelength range. This cutting edge new material research will be done in collaboration with colleagues at the University of Arkansas, Fayetteville (UAF).1
The material – a combination of silicon, germanium and tin grown on silicon substrates – will create a silicon optoelectronics “superchip” by improving processing speed, reliability and efficiency through combining photonic and silicon based devices. The technology will improve lasers and detectors in a wide range of applications such as lasers for medical use, infrared detections, and optical communications.
Funded by National Science Foundation (NSF) Experimental Program to Stimulate Competitive Research (EPSCoR), Air Force Office of Scientific Research (AFOSR), and National Aeronautics and Space Administration (NASA) EPSCoR, the research team at UAPB has a strong collaboration with UAF, where material growth and device fabrication research have been extensively performed. By leveraging the existing facilities in UAF such as the Nanoscale Material Science & Engineering Building (NANO) for material characterization and the High Density of Electronic Center (HiDEC) for device fabrication, the newly built measurement systems will complete the capability of passive device characterization at UAPB, which makes the institution well equipped to pursue worldwide leading positions in Silicon-based LIO. In addition to the significant research and technological accomplishments, the project provides graduate and undergraduate training in semiconductor device characterizations and development of novel infrared materials. The success of this project will undoubtedly lead to opportunities for commercialization of technical innovations to significantly contribute to the economic development of Arkansas.
For more information about the project, call Dr. Mortazavi at (870) 575-8789 or email@example.com.